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US 2010/0304545 A1Published application
Semiconductor device and manufacturing method thereof
AssigneePanasonic Corporation
InventorsHidenori IWADATE, Takeshi KOBIKI
Life of this patent
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Abstract
A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.
Claims10
1-10. (canceled)
A method of manufacturing a semiconductor device, the method including:
- a step of forming a first insulation film on a semiconductor substrate;
- a step of forming a high resistance element made of polysilicon on the first insulation film;
- a step of forming a second insulation film on the high resistance element;
- and
- a step of forming a hydrogen diffusion preventing film from a material having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the second insulation film on the second insulation film,
- wherein the hydrogen diffusion preventing film is formed so as to cover a part of the high resistance element.
3 more elements
Dependencies are inferred from the claim text.