Manufacturing method of phase shift mask, creating method of mask data of phase shift mask, and manufacturing method of semiconductor device
OwnerAkiko MIMOTOGI, Satoshi Tanaka +5inventors
InventorsAkiko MIMOTOGI, Satoshi Tanaka, Masanori Takahashi, Yoko Takekawa, Takamasa Takaki, Katsuyoshi Kodera, Hideichi Kawaguchi
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Abstract
A phase shift mask having a plurality of mask patterns or mask data thereof is prepared, and an overlapped focus range in each of the mask patterns in a case where a result of exposure to each of the mask patterns, obtained by an exposure experiment or a lithography simulation, meets a desired dimension is obtained. A digging depth is determined at discretion based on the obtained overlapped focus range.
Claims20
A manufacturing method of a phase shift mask, comprising:
- preparing a phase shift mask including a transmitting unit that transmits an exposure light and a light shielding unit that shields at least part of the exposure light, and having a plurality of mask patterns in which at least either one of pitches and pattern dimensions thereof are different, or mask data of the phase shift mask;
- performing an exposure experiment through the phase shift mask having a dug portion formed in a region for configuring the transmitting unit, or a lithography simulation using the mask data;
- obtaining an overlapped focus range in each of the plural mask patterns in a case where a result of exposure to each of the mask patterns, obtained by the exposure experiment or the lithography simulation, meets a desired dimension;
- and
- forming a dug portion with a digging depth determined at discretion based on the obtained overlapped focus range.
A method of creating mask data of a phase shift mask, comprising:
- preparing a phase shift mask including a transmitting unit that transmits an exposure light and a light shielding unit that shields at least part of the exposure light, and having a plurality of mask patterns in which at least either one of pitches and pattern dimensions thereof are different, or mask data of the phase shift mask;
- performing an exposure experiment through the phase shift mask having a dug portion formed in a region for configuring the transmitting unit, or a lithography simulation using the mask data;
- obtaining an overlapped focus range in each of the plural mask patterns in a case where a result of exposure to each of the mask patterns, obtained by the exposure experiment or the lithography simulation, meets a desired dimension;
- and
- creating mask data in a case where a dug portion with a digging depth determined at discretion based on the obtained overlapped focus range is formed.
A manufacturing method of a semiconductor device comprising:
- forming a photosensitive film on a semiconductor substrate;
- applying an exposure light through a phase shift mask, to form a pattern on the photosensitive film;
- processing the semiconductor substrate by using the photosensitive film having the pattern formed thereon as a mask;
- preparing a phase shift mask including a transmitting unit that transmits an exposure light and a light shielding unit that shields at least part of the exposure light, and having a plurality of mask patterns in which at least either one of pitches and pattern dimensions thereof are different, or mask data of the phase shift mask;
- performing an exposure experiment through the phase shift mask having a dug portion formed in a region for configuring the transmitting unit, or a lithography simulation using the mask data;
- obtaining an overlapped focus range in each of the plural mask patterns in a case where a result of exposure to each of the mask patterns, obtained by the exposure experiment or the lithography simulation, meets a desired dimension;
- and
- forming a dug portion with a digging depth determined at discretion based on the obtained overlapped focus range.
Dependencies are inferred from the claim text.