Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same
AssigneeHynix Semiconductor Inc.
InventorSung Hyun Oh
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Abstract
A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern.
Claims19
A photomask for extreme ultraviolet lithography, comprising:
- a reflection layer disposed over a transparent substrate, the substrate having a main chip region and a frame region, the reflecting layer capable of reflecting extreme ultraviolet light incident thereon;
- a phase shifter pattern disposed over the reflection layer and selectively exposing the reflection layer;
- an absorber pattern disposed over the phase shifter pattern of the frame region;
- and
- a reflectivity reduction region disposed in the absorber pattern, the reflectivity reduction region capable of guiding the shielding of the extreme ultraviolet light.
A method for fabricating a photomask for extreme ultraviolet lithography, the method comprising:
- forming a reflection layer capable of reflecting extreme ultraviolet light incident thereon over a transparent substrate having a main chip region and a frame region;
- forming a phase shifter pattern over the reflection layer to selectively expose the reflection layer;
- forming an absorber pattern over the phase shifter pattern of the frame region;
- and
- forming a reflectivity reduction region in the absorber pattern, the reflectivity reduction region capable of guiding the shielding of the extreme ultraviolet light.
Dependencies are inferred from the claim text.