Mask and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorJea Young Jun
Life of this patent
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Abstract
A method of fabricating a mask includes sequentially depositing a phase shift layer and a light shielding layer on a transparent substrate; forming a light shielding layer pattern and a phase shift layer pattern by selectively etching the light shielding layer and the phase shift layer; forming side walls on side faces of the phase shift layer pattern; cleaning the substrate formed with the side walls; and selectively removing a portion of the light shielding layer. The side wall can be formed of an oxide formed by oxidizing the side faces of the phase shift layer pattern.
Claims30
A method for fabricating a mask, comprising:
- sequentially depositing a phase shift layer and a light shielding layer on a transparent substrate;
- forming a light shielding layer pattern and a phase shift layer pattern by selectively etching the light shielding layer and the phase shift layer;
- forming protecting side walls which covers side surfaces of the phase shift layer pattern;
- cleaning the substrate, wherein the protecting side walls protect the phase shift layer pattern from being damaged;
- and
- selectively removing at least a portion of the light shielding layer pattern.
A method for fabricating a mask, comprising:
- sequentially depositing a phase shift layer and a light shielding layer on a transparent substrate;
- forming a light shielding layer pattern and a phase shift layer pattern by selectively etching the light shielding layer and the phase shift layer;
- forming oxide side walls by oxidizing side faces of the phase shift layer pattern;
- cleaning the substrate formed with the oxide side walls;
- and
- selectively removing at least a portion of the light shielding layer pattern.
A method for fabricating a mask, comprising:
- sequentially depositing a phase shift layer and a light shielding layer on a transparent substrate;
- forming a light shielding layer pattern and a phase shift layer pattern by selectively etching the light shielding layer and the phase shift layer;
- forming a polymer layer which absorbs contaminants generated in forming the light shielding layer pattern and the phase shift layer pattern over the light shielding layer pattern and the phase shift layer pattern;
- cleaning the substrate so that the polymer layer is removed;
- and
- selectively removing at least a portion of the light shielding layer,
- wherein the method further comprising forming oxide side walls on side faces of the phase shift layer pattern by selectively oxidizing the side faces of the phase shift layer pattern when a CD of the phase shift layer pattern is estimated to be smaller than a target CD.
A method for fabricating a mask, comprising:
- sequentially depositing a phase shift layer and a light shielding layer on a transparent substrate;
- forming a light shielding layer pattern and a phase shift layer pattern by selectively etching the light shielding layer and the phase shift layer;
- measuring a CD of the phase shift layer pattern and determining whether the CD of the phase shift layer pattern is within a process tolerance of a target CD;
- forming correction side walls on side faces of the phase shift layer pattern when the CD of the phase shift layer pattern is determined to be smaller than the target CD;
- and
- selectively removing a portion of the light shielding layer pattern.
A mask, comprising:
- a phase shift layer pattern formed on a transparent substrate;
- and
- correction side walls disposed on side faces of the phase shift layer pattern when a CD of the phase shift layer pattern is smaller than a target CD.
Dependencies are inferred from the claim text.