Method of manufacturing silicon film by using silicon solution process
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-hyun Lee, Dong-joon Ma
Life of this patent
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Abstract
Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.
Claims7
A method of manufacturing a silicon (Si) film by using a Si solution process, the method comprising:
- preparing a Si forming solution;
- irradiating ultraviolet rays (UV) on the prepared Si forming solution;
- coating the Si forming solution on a substrate;
- removing a solvent in the Si forming solution coated on the substrate;
- and
- irradiating an electron beam on the Si forming solution from which the solvent is removed.
Dependencies are inferred from the claim text.