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US 2010/0304042 A1Published application
Method for forming superhigh stress layer
OwnerHsiu-Lien Liao, Teng-Chun Tsai +3inventors
InventorsHsiu-Lien Liao, Teng-Chun Tsai, Jei-Ming Chen, Yu-Tuan Tsai, Chien-Chung Huang
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Abstract
A method for forming super high stress layer is provided. First, a substrate is provided. Second, an ammonia-related pretreatment is performed on the substrate. The flow rate of ammonia is not less than s.c.c.m. and the high-frequency source power is set to be not less than 800 W. Later, the super high stress layer is formed on the substrate having undergone the ammonia-related pretreatment.
Claims20
A method for forming a super high stress layer, comprising:
- providing a substrate;
- performing an ammonia-related pretreatment on said substrate under a high-frequency source power, wherein the flow rate of ammonia in said ammonia-related pretreatment is not less than 1000 s.c.c.m. and said high-frequency source power is set to be not less than 800 W;
- and
- forming said super high stress layer on said substrate which has undergone said ammonia-related pretreatment.
1 more element
A method for forming a super high stress layer, comprising:
- providing a substrate;
- performing a silicide procedure on said substrate;
- performing an ammonia-related pretreatment on said substrate under a temperature not greater than 400° C. and a under high-frequency source power, wherein the flow rate of ammonia in said ammonia-related pretreatment is not less than 1000 s.c.c.m. and said high-frequency source power is set to be not less than 800 W;
- and
- forming said super high stress layer on said substrate which has undergone said ammonia-related pretreatment.
2 more elements
Dependencies are inferred from the claim text.