Substrate processing system and methods thereof

A method for processing a substrate within a substrate processing system, comprising:

• depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe housing of the substrate processing system, wherein the buffer chamber contains a first substrate handling robot;
• maintaining an internal pressure of about 1×10−5 Torr or lower within a transfer chamber contained within the mainframe housing, wherein at least one physical vapor deposition chamber is coupled to the transfer chamber and the transfer chamber contains a second substrate handling robot;
• and
• transferring the substrate from the vapor deposition chamber to the buffer chamber by the first substrate handling robot while maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber.

A method for processing a substrate within a substrate processing system, comprising:

• depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe housing of the substrate processing system, wherein the material is deposited during a vapor deposition process and at least one halogenated compound is delivered into the vapor deposition chamber during the vapor deposition process;
• and
• transferring the substrate from the vapor deposition chamber to the buffer chamber while:
• maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber;
• flowing at least one gas into the buffer chamber;
• and
• evacuating the vapor deposition chamber.