Methods of Making Wafer Supports
AssigneeMEMC Electronic Materials, Inc.
InventorsLarry W. Shive, Brian L. Gilmore
Life of this patent
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Abstract
A method is disclosed for sandblasting a wafer support platform to create a surface having a uniform roughness. Contaminants become embedded in the surface during the sandblasting procedure. A layer is applied over the surface to isolate the contaminants from a supported wafer while maintaining the uniform roughness.
Claims20
A method of preparing a wafer support platform to be used for supporting a semiconductor wafer during treatment, the method comprising the steps of:
- sandblasting a surface of the platform so that contaminants are introduced on the surface of the platform;
- and
- applying an isolating layer on the surface of the platform after the sandblasting to prevent the contaminants from diffusing into the supported wafer during treatment.
A method of preparing a substrate support platform for supporting a substrate during treatment, the method comprising the steps of:
- sandblasting a surface of the platform, wherein the sandblasting embeds contaminants into the platform, and wherein at least some of the contaminants protrude from the surface of the platform;
- and
- applying an isolating layer on the surface of the platform after sandblasting to prevent the contaminants from diffusing into the supported substrate during treatment, wherein the layer is applied such that the layer separates the supported substrate from the contaminants embedded in the surface of the platform.
A method of preparing a surface of a wafer support platform for supporting a semiconductor wafer during treatment, the method comprising the steps of:
- sandblasting the surface of the wafer support platform, wherein sandblasting the surface embeds contaminants including metal particles in the surface of the platform, and wherein at least some of the metal particles protrude from the surface of the body;
- and
- applying a layer on the surface of the platform after sandblasting the surface of the platform, wherein the layer prevents the contaminants from diffusing into the supported wafer during treatment, wherein the layer is applied such that it has sufficient thickness that the contaminants embedded in the surface of the platform are entirely between the layer and the surface of the platform.
Dependencies are inferred from the claim text.