Nonvolatile memory device and method of operating and fabricating the same

A method of operating a nonvolatile memory device comprising:

• applying a first erasing voltage to a bit line and a second erasing voltage to a common source line, with a plurality of memory transistors being between the bit line and the common source line;
• and
• injecting holes into channels of the memory transistors through band-to-band tunneling due to the first and second erasing voltages, thereby charging channels of the memory transistors with a balance voltage between the first erasing voltage and the second erasing voltage.