Nonvolatile memory cell comprising a diode and a resistance-switching material

A method for forming a monolithic three dimensional memory array, the method comprising:

• a) forming a first memory level above a substrate, the first memory level formed by a method comprising:
• i) forming a first plurality of diodes;
• and
• ii) forming a first plurality of resistance-switching elements comprising material selected from the group consisting of NixOy, NbxOy, TixOy, HfxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy, wherein each of the first diodes is arranged in series with one of the resistance-switching elements;
• and
• b) monolithically forming at least a second memory level above the first memory level and above the substrate.

A method for forming a monolithic three dimensional memory array, the method comprising:

• forming a first plurality of substantially parallel, substantially coplanar conductors at a first height above a substrate and extending in a first direction;
• forming a second plurality of substantially parallel, substantially coplanar conductors at a second height above the first height and extending in a second direction different from the first direction;
• forming a first plurality of resistance-switching elements comprising a material selected from the group consisting of NixOy, NbxOy, TixOy, HfxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy;
• forming a first plurality of diodes, wherein the first diodes and the first resistance switching elements are above the first height and below the second height;
• forming second diodes above the second conductors;
• and
• forming third conductors above the second conductors.

A method for forming a nonvolatile memory cell, the method comprising:

• forming a first conductor;
• forming a second conductor;
• forming a resistance-switching element;
• and
• forming a diode, wherein the diode and the resistance-switching element are disposed electrically in series between the first conductor and the second conductor,
• and wherein, during formation of the first and second conductors, diode, and switching element and crystallization of the diode, temperature does not exceed about 500° C.

A method for forming a monolithic three dimensional memory array, the method comprising:

• i) forming a first memory level above a substrate, the first memory level comprising a plurality of first memory cells, each first memory cell comprising:
• a) a resistance-switching element;
• and
• b) a diode, wherein the temperature during formation of the first memory level does not exceed about 475° C.;
• and
• ii) monolithically forming at least a second memory level about the first memory level.

A method for programming and sensing a memory cell in a memory array, wherein the memory cell comprises a resistivity-switching layer of a metal oxide or nitride compound, the metal oxide or nitride compound including exactly one metal, and a diode comprising polycrystalline semiconductor material, the resistivity-switching layer and the diode arranged electrically in series, the method comprising:

• i) applying a first programming pulse to the memory cell wherein the first programming pulse:
• a) detectably changes a first resistivity state of the resistivity-switching layer;
• or
• b) detectably changes a second resistivity state of the polycrystalline semiconductor material, or
• c) detectably changes the first resistivity state of the resistivity-switching layer and detectably changes the second resistivity state of the polycrystalline semiconductor material;
• and
• ii) reading the memory cell, wherein the first resistivity state of the resistivity switching layer serves to store data and the second resistivity state of the polycrystalline semiconductor material serves to store data.