F-RAM device with current mirror sense amp

A method for reading a 1T1C F-RAM device containing a plurality of

• F-RAM cells comprising;
• precharging a first bitline and a second bitline;
• precharging a first local I/O and a second local I/O;
• applying a WL signal to connect a F-RAM cell from said plurality of F-RAM cells to said first bitline which is coupled by a first current mirror to said first local I/O;
• applying a SA signal to connect a sense amp to said first local I/O and to said second local I/O;
• applying a YSEL signal to connect said first local I/O to said first current mirror;
• applying a reference signal to a complementary read path consisting of said second bitline, a second current mirror, and said second local I/O;
• applying a PL signal to read a data value from said F-RAM cell;
• removing said YSEL signal to disconnect said first local I/O from said first current mirror;
• applying a SAEN signal to activate said sense amp;
• and
• applying a WB signal to connect said first bitline to said second local I/O to rewrite said data value into said F-RAM cell.