Light-emitting device
AssigneeFUJIFILM Corporation
InventorAkihiro ANZAI
Life of this patent
Estimating the term…
Abstract
A light-emitting device is obtained by disposing a reflective layer on a GaAs substrate, by disposing a light-emitting layer on the reflective layer, and by disposing a surface layer on the light-emitting layer. The surface layer is formed by alternately stacking a low refractive film and a high refractive film having a refractive index higher than that of the low refractive film. The surface layer may be formed by alternately stacking one low refractive film and one high refractive film. The outermost film in the surface layer may be the low refractive film. The film adjacent to the light-emitting layer in the surface layer may be the high refractive film.
Claims14
A light-emitting device comprising a light-emitting layer, a reflective layer formed on one side of the light-emitting layer, and a surface layer formed on the other side of the light-emitting layer, wherein
- a light from the light-emitting layer is reflected by the reflective layer, and at least a light from the light-emitting layer and a light from the reflective layer are transmitted through the surface layer, so that a light is emitted from the surface layer, and
- the surface layer is formed by alternately stacking a low refractive film and a high refractive film having a refractive index higher than that of the low refractive film.
Dependencies are inferred from the claim text.