High withstand voltage semiconductor device and current control device using the same

A high withstand voltage semiconductor device comprising:

• a second conductive-type resurf region formed on a surface part of a first conductive-type semiconductor substrate;
• a first conductive-type base region formed adjacent to said resurf region in said semiconductor substrate;
• a second conductive-type emitter/source region formed in said base region and apart from said resurf region;
• a gate insulation film formed on said semiconductor substrate to cover said base region at a part between said emitter/source region and said resurf region;
• a second conductive-type drain region formed in said resurf region and apart from said base region;
• a first conductive-type collector region formed in said resurf region and apart from said base region;
• a gate electrode formed on said gate insulation film;
• a collector/drain electrode formed on said semiconductor substrate and electrically connected to both said collector region and said drain region;
• a back gate electrode formed on said semiconductor substrate and electrically connected to said base region;
• and
• an emitter/source electrode formed on said semiconductor substrate and electrically connected to said emitter/source region,
• wherein said collector region and said drain region are each configured with separate parts, and arranged such that the respective parts of said collector region and the respective parts of said drain region are alternately in contact with each other in a direction perpendicular to a direction from said collector region to said emitter/source region.