High-aspect ratio contact element with superior shape in a semiconductor device for improving liner deposition

A method of forming a contact element of a semiconductor device, the method comprising:

• forming an etch mask above an interlayer dielectric material, said etch mask comprising a hard mask material;
• forming a first portion of a contact opening in said interlayer dielectric material on the basis of said etch mask, said first portion terminating in said interlayer dielectric material;
• forming a spacer element in said first portion;
• forming a second portion of said contact opening on the basis of said spacer element and at least said hard mask material;
• performing an etch process so as to etch through an etch stop layer formed below said interlayer dielectric material;
• and
• filling said contact opening with a conductive material.

A semiconductor device, comprising:

• a contact region formed in a semiconductor region;
• an etch stop layer formed on a portion of said contact region;
• an interlayer dielectric material formed above said etch stop layer;
• a contact element formed in said interlayer dielectric material and said etch stop layer so as to connect to said contact region, said contact element having a tapered upper portion and a substantially non-tapered lower portion, said contact element comprising a conductive material;
• and
• a spacer element selectively formed on sidewalls of said lower portion.