Electrostatic discharge protection device
AssigneeBauaBTech
InventorKil Ho Kim
Life of this patent
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Abstract
Disclosed is an electrostatic discharge protection device that overcomes problems of an LVTNR device by serially connecting a diode to the LVTNR device and coupling a gate of a MOSFET structure thereto. The electrostatic discharge protection device of the present invention includes a diode comprising N well/P+ diffusion regions; a resistor connected in parallel to the diode; a MOS transistor having a drain connected to the diode and the resistor and constituting a cathode along with a source and a gate; and at least one diode connected in series to the cathode.
Claims16
An electrostatic discharge (ESD) protection device comprising:
- a diode comprising N well/P+ diffusion regions;
- a resistor connected in parallel to the diode;
- a MOS transistor having a drain connected to the diode and the resistor and constituting a cathode along with a source and a gate;
- and
- at least one diode connected in series to the cathode.
An ESD protection device comprising:
- a diode comprising N well/P+ diffusion regions;
- a MOS transistor having a drain connected to the diode and constituting a cathode along with a source and a gate;
- and
- at least one diode connected in series to the cathode.
An ESD protection device comprising:
- a semiconductor substrate;
- a deep-N well region formed in a predetermined region on the semiconductor substrate;
- a P well region and an N well region formed adjacent to each other in the deep-N well region;
- a MOS transistor formed in the P well region;
- and
- an anode P+ impurity region formed in the N well region, the anode P+ impurity region being connected to an anode.
Dependencies are inferred from the claim text.