Semiconductor device having vertical channel transistor and manufacturing method of the same
AssigneeHynix Semiconductor Inc.
InventorMin Chul SUNG
Life of this patent
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Abstract
A semiconductor device having a vertical channel transistor and a method for manufacturing the same are provided. In the semiconductor device, a metal bit line is formed between vertical channel transistors, and the metal bit line is connected to only one of the vertical channel transistors through an asymmetric bit line contact. Through such a structure, the resistance of the bit line can be improved and the process margin for formation of the bit line can be secured.
Claims18
A semiconductor device having a vertical channel transistor, the semiconductor device comprising:
- a first pillar and a second pillar each having a junction region at a lower portion thereof;
- a bit line buried between the first pillar and the second pillar;
- and
- an asymmetric bit line contact contacting the junction region of the first pillar to the bit line.
A method for manufacturing a semiconductor device, the method comprising:
- etching a silicon substrate to form a first pillar and a second pillar separated from each other by a predetermined interval;
- forming junction regions under the first pillar and the second pillar;
- forming a bit line contact at a sidewall of the junction region of the first pillar, and forming an insulating film at a sidewall of the junction region of the second pillar;
- and
- forming a bit line contacting the bit line contact in a space between the bit line contact and the insulating film.
Dependencies are inferred from the claim text.