Semiconductor device and related fabrication methods that use compressive material with a replacement gate technique

A method of fabricating a semiconductor device, the method comprising:

• providing a device structure having a gate structure overlying a layer of semiconductor material, the gate structure comprising a gate insulator overlying the upper surface of the semiconductor material and comprising a temporary gate element overlying the gate insulator;
• forming a layer of offsetting material overlying the gate structure, such that the height of the offsetting material above the upper surface of the semiconductor material is less than the height of the gate structure;
• forming a layer of compressive material overlying the offsetting material;
• removing some of the compressive material and some of the offsetting material to expose an upper surface of the temporary gate element, while leaving some of the compressive material and some of the offsetting material intact and external to sidewalls of the temporary gate element;
• thereafter, selectively removing the temporary gate element to form a gate recess;
• and
• thereafter, filling the gate recess with a gate electrode material.

A semiconductor device comprising:

• a layer of semiconductor material;
• a gate insulator overlying the semiconductor material;
• a gate electrode overlying the gate insulator and having sidewalls, the gate electrode being formed in accordance with a replacement gate technique;
• and
• regions of compressive material adjacent to the gate electrode and coupled to the sidewalls.