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AssigneeBAE SYSTEMS plc
InventorsDong Xu, Xiaoping Yang, Wendell Kong, Lee M. Mohnkern, Phillip M. Smith, Pane-chane Chao
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A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.
A method of providing an ultra-short gate, high electron-mobility transistor with ultra-high frequency and high-power performance, comprising the step of:
An improved high electron-mobility transistor including a gate recess groove width in excess of 100 nm.
A high electron-mobility transistor having a composite channel layer including indium gallium arsenide layers that sandwich a thin indium arsenide layer.
A high electron-mobility transistor including a channel layer and double silicon doping spikes to either side of said channel layer, the lower of said silicon spikes providing additional electrons to the channel layer and improving the gain of said transistor.
A high electron-mobility transistor including an ultra-short gate electrode deposited on an expanded width recess groove in the cap layer thereof.
The transistor of claim 24, wherein said asymmetric recess is between 250 and 300 nm in width.
A high electron-mobility transistor having an ultra-short gate electrode characterized by a gain in excess of 14 dB at 110 GHz.
A high electron-mobility transistor having an ultra-short gate electrode characterized by an on-state breakdown voltage in excess of 3.5 V.
Dependencies are inferred from the claim text.