Esd protection structure

An electrostatic discharge protection structure comprising:

• a first bipolar junction transistor having a collector with a first conductivity type and a base;
• a second bipolar junction transistor having a collector with the first conductivity type and a base, wherein the collector of the first bipolar junction transistor is electrically coupled to the collector of the second vertical bipolar junction transistor;
• a third bipolar junction transistor, wherein:
• a collector of the third bipolar junction transistor has a second conductivity type, wherein the second conductivity type is different than the first conductivity type;
• and
• a base of the third bipolar junction transistor has the first conductivity type, wherein the base is electrically coupled to the collector of the first bipolar junction transistor and the collector of the second bipolar junction transistor;
• and
• a first avalanche diode electrically coupled to the base and the collector of the first bipolar junction transistor;
• and
• a second avalanche diode electrically coupled to the base and the collector of the second bipolar junction transistor.

An electrostatic discharge protection electrostatic discharge protection structure comprising:

• a first vertical bipolar junction transistor;
• a second vertical bipolar junction transistor, wherein:
• the second vertical bipolar junction transistor shares a collector with the first vertical bipolar junction transistor;
• and
• the collector is a buried layer having a first conductivity;
• a bipolar junction transistor wherein:
• a collector of the horizontal bipolar junction transistor has a second conductivity that is a different conductivity than the first conductivity;
• and
• a base of the horizontal bipolar junction transistor is electrically coupled to the buried layer;
• a first avalanche diode electrically coupled to a base and the collector of the first vertical bipolar junction transistor;
• and
• a second avalanche diode electrically coupled to a base and the collector of the second vertical bipolar junction transistor.