Substrate processing apparatus

A substrate processing apparatus comprising:

• a process chamber configured to process a substrate;
• a first plasma generation chamber installed in the process chamber;
• a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber;
• a pair of first discharge electrodes configured to generate plasma in the first plasma generation chamber and to excite the first reactive gas for generating an active species of the first reactive gas;
• a first gas ejection port installed in a side wall of the first plasma generation chamber to eject the active species of the first reactive gas toward the substrate;
• a second plasma generation chamber installed in the process chamber;
• a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber;
• a pair of second discharge electrodes configured to generate plasma in the second plasma generation chamber and to excite the second reactive gas for generating an active species of the second reactive gas;
• and
• a second gas ejection port installed in a side wall of the second plasma generation chamber to eject the active species of the second reactive gas toward the substrate.