Chemical mechanical polishing compositions for copper and associated materials and method of using same
AssigneeAdvanced Technology Materials, Inc.
InventorsMichael Darsillo, Peter Wrschka, Karl Boggs
Life of this patent
Estimating the term…
Abstract
A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
Claims21
-39. (canceled)
A method of planarizing a wafer substrate having copper films deposited thereon, said method comprising contacting copper with a composition to remove the copper and expose an underlying liner layer, said composition comprising the following composition ranges by weight, based on the total weight of the composition:
- oxidizing agent
- 0.01 to less than 30
- wt. %
- passivating agent
- 0.01 to 10
- wt. %
- chelating agent
- 0.1 to 25
- wt. % and
- abrasive
- 0 to 30
- wt. %,
- rheology agent
- 0.01 to 5
- wt. %
- wherein the rheology agent is effective at maintaining the desired viscosity and/or shear rate of the composition while in contact with the substrate.
Dependencies are inferred from the claim text.