Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorsYuji Sera, Kazuhiro Okuda
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device may include, but is not limited to, the following processes. A conductive film is formed over a semiconductor substrate. First and second photo resist patterns are formed on the conductive film. A space is located between the first and second photo resist patterns. An insulating mask is formed by using catalytic reaction so as to cover surfaces of the first and second photo resist patterns. The insulating mask protects the surfaces of the first and second photo resist patterns. A part of the conductive film is etched by using the insulating mask on the first and second photo resist patterns as an etching mask.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a conductive film over a semiconductor substrate;
- forming first and second photo resist patterns on the conductive film, a space being located between the first and second photo resist patterns;
- forming an insulating mask by using catalytic reaction, the insulating mask covering surfaces of the first and second photo resist patterns to protect the surfaces of the first and second photo resist patterns;
- and
- etching a part of the conductive film by using the insulating mask on the first and second photo resist patterns as an etching mask.
A method of manufacturing a semiconductor device, comprising:
- forming a conductive film over a semiconductor substrate;
- forming first and second photo resist patterns over the conductive film;
- providing a first gas including a catalytic material over the semiconductor substrate, an attachment rate of the catalytic material to the first and second photo resist patterns being greater than that of the catalytic material to the conductive film;
- providing a second gas so that the second gas reacts with the catalytic material attached onto the first and second photo resist patterns to form an insulating hard mask covering surfaces of the first and second photo resist patterns;
- and
- etching a part of the conductive film by using the insulating mask on the first and second photo resist patterns as an etching mask.
A method of manufacturing a semiconductor device, comprising:
- forming a conductive film over a semiconductor substrate;
- forming first and second photo resist patterns on the conductive film;
- forming an insulating mask by using catalytic reaction, the insulating mask covering surfaces of the first and second photo resist patterns to reduce a horizontal size of the conductive film exposed between the first and second photo resist patterns, the horizontal size being smaller than a resolution limit for forming the first and second photo resist patterns;
- and
- etching a part of the conductive film by using the insulating mask on the first and second photo resist patterns as an etching mask.
Dependencies are inferred from the claim text.