Method for fabricating nonvolatile memory device

A method for fabricating a nonvolatile memory device, the method comprising:

• forming a first polysilicon layer for a floating gate that is patterned to extend in a longitudinal direction over a substrate;
• forming a charge blocking layer and a second polysilicon layer for a control gate over a resulting structure including the first polysilicon layer;
• forming an etch mask pattern extending in a transverse direction over the second polysilicon layer;
• performing a primary etch process on the second polysilicon layer until the charge blocking layer is exposed;
• forming a passivation layer on a sidewall of the second polysilicon layer exposed by the primary etch process;
• and
• performing a secondary etch process on the charge blocking layer, the remaining second polysilicon layer, and the first polysilicon layer.

A method for fabricating a nonvolatile memory device, the method comprising:

• forming a charge blocking layer over a floating gate;
• forming a second conductive layer for a control gate over the charge block layer;
• performing a primary etch process on the second conductive layer until the charge blocking layer is exposed;
• forming a passivation layer on the second conductive layer exposed by the primary etch process;
• and
• performing a secondary etch process on the charge blocking layer, the second conductive layer, and the first conductive layer, wherein loss of a sidewall of the second polysilicon layer extending over the charge block layer is prevented by the passivation layer during the second etch process.