Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge

A method, comprising:

• forming a plurality of circuit elements in and above a silicon-containing semiconductor layer formed above a substrate, said substrate having a central region adjacent to an edge region;
• forming a dielectric protection layer selectively in said edge region so as to mask material of said silicon-containing semiconductor layer in said edge region;
• and
• forming a metal silicide in exposed areas of said silicon-containing semiconductor layer.

A method of increasing adhesion of an interlayer dielectric material of a semiconductor device, the method comprising:

• forming circuit elements in a central region of a silicon-containing semiconductor layer;
• selectively forming a metal silicide in non-dielectric portions of said circuit elements while covering an edge region of said silicon-containing semiconductor layer;
• and
• forming an interlayer dielectric material above said central region and said edge region.