Method of forming nonvolatile memory device

A method of forming a nonvolatile memory device, comprising:

• alternatingly stacking n number of dielectric layers and n number of conductive layers on a substrate, wherein n>2, and n is a natural number;
• forming a non-photosensitive pattern on the alternatingly stacked dielectric layers and conductive layers;
• etching an i-th conductive layer and an i-th dielectric layer by using the non-photosensitive pattern as an etch mask, wherein 2≦i≦n, and i is a natural number indicating a stacking order of the conductive layers and the dielectric layers;
• laterally etching a sidewall of the non-photosensitive pattern;
• and
• etching the i-th conductive layer, (i−1)-th conductive layer, i-th dielectric layer and (i−1)-th dielectric layer by using the etched non-photosensitive pattern as an etch mask;
• forming an interlayer dielectric covering the etched conductive layers and the etched dielectric layers;
• forming an opening penetrating the interlayer dielectric, the conductive layers and the dielectric layers;
• forming a data storage pattern on a sidewall of the opening;
• forming an active pattern in the opening in which the data storage pattern is formed;
• forming interconnection contacts by partially removing the interlayer dielectric to form contact holes therein and filling an inside of the contact holes with a conductive material;
• and
• forming interconnections on the active pattern and the interconnection contacts.