Method for manufacturing semiconductor modules
OwnerYoshio OKAYAMA, Katsumi Itoinventors
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Abstract
In a method for making a semiconductor module, a bump electrode and a recess are formed by etching a copper sheet. An insulating resin layer is formed, in the recess, up to a position lower than the height of the bump electrode, and then a semiconductor device and the copper sheet, including a wiring layer formed integrally with the bump electrode, are press-bonded together. The wiring layer is warped to protrude toward the semiconductor device, which assures the electrical connection between the bump electrodes and device electrodes.
Claims8
A method for manufacturing a semiconductor module, the method comprising:
- a first process of forming a protrusion by etching a metallic sheet;
- a second process of forming an insulating layer having a thickness such that the protrusion is partially exposed;
- and
- a third process of press-bonding a semiconductor substrate, having a plurality of electrodes on the surface thereof, and the metallic sheet via the insulating layer and electrically connecting the protrusion to the electrode.
A method for manufacturing a semiconductor module, the method comprising:
- a first process of forming a protrusion by etching a metallic sheet;
- a second process of forming a metallic layer on a top surface of the protrusion and forming an insulating layer having a thickness such that the metallic layer is partially exposed;
- and
- a third process of press-bonding a semiconductor substrate, having a plurality of electrodes on the surface thereof, and the metallic sheet via the insulating layer and electrically connecting the protrusion to the electrode.
Dependencies are inferred from the claim text.