Method of manufacturing nonvolatile memory device
AssigneeKabushiki Kaisha Toshiba
InventorToshiharu TANAKA
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Abstract
A method of manufacturing a nonvolatile memory device according to an embodiment of the present invention comprises: forming a metal film containing metal whose oxide functions as a variable resistive material and which reacts with silicon through heat treatment and forms metal silicide, on an interlayer insulating film having a silicon layer, which is patterned in a predetermined shape and connected to a first wire, with the surface thereof exposed, performing heat treatment to form a silicide layer on the surface of the silicon layer, oxidizing the silicide layer to form a variable resistive layer on an upper part of the silicon layer, and forming a second wire coupled to the variable resistive layer.
Claims20
A method of manufacturing a nonvolatile memory device comprising:
- forming a metal film containing metal whose oxide functions as a variable resistive material and which reacts with silicon through heat treatment and forms metal silicide, on an interlayer insulating film having a silicon layer with rectification whose surface is exposed, which is connected to a first wire and is patterned in a predetermined shape;
- performing the heat treatment to form a silicide layer on a surface of the silicon layer in a self-aligning manner;
- oxidizing the silicide layer to form a variable resistive layer on an upper part of the silicon layer;
- and
- forming a second wire having a predetermined shape coupled to the variable resistive layer.
A method of manufacturing a nonvolatile memory device comprising:
- forming a plurality of first wires extending in parallel in a first direction;
- forming a silicon film with rectification above the first wires;
- patterning the silicon film in a columnar shape to form silicon layers to be coupled to the first wires;
- embedding an interlayer insulating film among the columnar silicon layers;
- forming, on the interlayer insulating film having the silicon layers with surfaces thereof exposed, a metal film containing metal whose oxide functions as a variable resistive material and which reacts with silicon through heat treatment and forms metal silicide;
- performing the heat treatment to form silicide layers on surfaces of the silicon layers in a self-aligning manner;
- oxidizing the silicide layers to form variable resistive layers on upper parts of the silicon layers;
- and
- forming a plurality of second wires coupled to the variable resistive layers and extending in parallel in a second direction crossing the first direction.
A method of manufacturing a nonvolatile memory device comprising:
- laminating, in order, a first wiring layer as a material of a first wire and a silicon film having rectification;
- patterning the first wiring layer and the silicon film in a stripe shape extending in a predetermined direction;
- embedding an interlayer insulating film between lower structures patterned in the stripe shape;
- forming, on the interlayer insulating film having the silicon film with a surface thereof exposed, a metal film containing metal whose oxide functions as a variable resistive material and which reacts with silicon through heat treatment and forms metal silicide;
- performing the heat treatment to form a silicide layer on a surface of the silicon film in a self-aligning manner;
- oxidizing the silicide layer to form a variable resistive layer on an upper part of the silicon film;
- forming a second wiring layer as a material of a second wire above the variable resistive layer and the interlayer insulating film;
- and
- patterning, in a stripe shape extending in a direction perpendicular to the lower structures below the second wiring layer, the second wiring layer, the variable resistive layer, and the silicon film in the lower structures.
Dependencies are inferred from the claim text.