Method of wafer bonding
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMartin Liu, Alex Hsu, Chung-Yi Yu, Chia-Shiung Tsai
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Abstract
Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer over a portion of the front side of the device substrate, trimming the first edge portion, removing the material layer, bonding the front side of the device substrate to a carrier substrate, thinning the device substrate from the back side, and trimming a second edge portion of the thinned device substrate.
Claims20
A method of fabricating a semiconductor device, comprising:
- providing a device substrate having a front side, a back side, and a first edge portion;
- forming a material layer over a portion of the front side of the device substrate;
- trimming the first edge portion;
- removing the material layer;
- bonding the front side of the device substrate to a carrier substrate;
- thinning the device substrate from the back side;
- and
- trimming a second edge portion of the thinned device substrate.
A method of fabricating a semiconductor device, comprising:
- providing a device substrate having a front surface, a back surface, and an edge region;
- forming a material layer to substantially cover the front surface;
- trimming the edge region including the material layer overlying the edge region;
- removing the material layer;
- and
- bonding the front surface of the device substrate to a carrier substrate.
A method of fabricating a semiconductor device, comprising:
- providing a device substrate having a front side and a back side;
- bonding the front side of the device substrate to a carrier substrate;
- thinning the device substrate from the back side;
- and
- trimming an edge portion of the thinned device substrate.
Dependencies are inferred from the claim text.