Cleaning liquid for lithography and method for forming a resist pattern using the same

Abstract

Provided are a cleaning liquid for lithography capable of suppressing occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. A cleaning liquid for lithography containing (A) an anionic surfactant, (B) an amine compound, and (C) water. In the cleaning liquid for lithography of the present invention, the anionic surfactant and the amine compound form a salt in the cleaning liquid for lithography, and thus penetration of the anionic surfactant into a resist film can be suppressed. Therefore, even when a method for forming a resist pattern is performed, the resist film is not dissolved by using the cleaning liquid for lithography of the present invention, whereby occurrence of CD shift can be efficiently suppressed.

Dependencies are inferred from the claim text.