Method for forming pattern of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsKi Lyoung Lee, Cheol Kyu Bok, Keun Do Ban
Life of this patent
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Abstract
A method for forming a pattern of a semiconductor device is provided. Specifically, in a method for manufacturing a NAND flash memory device using a spacer patterning process, a dummy pattern, which is not used in an actual device operation, is additionally formed in a peripheral circuit region when a photoresist pattern for forming a string pattern is formed in a cell region. As a result, the edge photoresist pattern is prevented from being bent, and a critical dimension difference between the center region and the edge region of the photoresist pattern lo is not generated, thereby improving a margin of DOF to obtain a reliable semiconductor device.
Claims15
A method for forming a pattern of a semiconductor device, the method comprising:
- providing a substrate having a cell region and a peripheral circuit region, the substrate having an underlying layer overlying the cell region and the peripheral region;
- forming a mask film and a first photoresist film over the underlying layer of the substrate, the first photoresist film overlying the mask film;
- patterning the first photoresist film to form a first photoresist pattern in the cell region and a dummy pattern in the peripheral circuit region;
- forming a spacer at sidewalls of the first photoresist pattern and the dummy pattern;
- removing the first photoresist pattern and the dummy pattern to form a spacer pattern in the cell region;
- coating a second photoresist film over the substrate including the spacer pattern;
- patterning the second photoresist film to form a photoresist pad pattern in the peripheral circuit region;
- and
- etching the mask film with the spacer pattern of the cell region and the photoresist pad pattern of the peripheral circuit region as etching masks at least until the underlying layer is exposed, thereby forming a mask pattern.
A method for forming a pattern of a semiconductor device, the method comprising:
- providing a substrate that includes a cell region and a peripheral circuit region, the substrate including an underlying layer overlying the cell and the peripheral circuit region, a mask film overlying the underlying layer, an antireflection film overlying the mask film, and a first photoresist film overlying the antireflection film;
- patterning the first photoresist film to form a first photoresist pattern in the cell region and a dummy pattern in the peripheral circuit region;
- forming a spacer at sidewalls of the first photoresist pattern and the dummy pattern;
- removing the first photoresist pattern and the dummy pattern to form a spacer pattern in the cell region;
- coating a second photoresist film over the substrate including the spacer pattern;
- patterning the second photoresist film to form a photoresist pad pattern in the peripheral circuit region;
- and
- etching the mask film with the spacer pattern of the cell region and the photoresist pad pattern of the peripheral circuit region as etching masks to form a mask pattern, the mask pattern exposing portions of the underlying layer.
Dependencies are inferred from the claim text.