Back to results
US 2010/0248152 A1Published application
Using Electric-Field Directed Post-Exposure Bake for Double-Patterning (D-P)
AssigneeTokyo Electron Limited
InventorsSteven Scheer, Mark Somervell
Life of this patent
Estimating the term…
Abstract
The invention provides a method of processing a substrate using Double-Patterning (D-P) processing sequences and Electric-Field Enhanced Layers (E-FELs). The D-P processing sequences and E-FELs can be used to create lines, trenches, vias, spacers, contacts, and gate structures using a minimum number of etch processes.
Claims20
A method of processing a substrate comprising:
- receiving a plurality of un-patterned substrates and associated substrate data, each un-patterned substrate having one or more previously-created layers thereon;
- depositing at least one target layer on the one or more previously-created layers;
- depositing a bottom anti-reflective coating (BARC) layer on the at least one target layer on a first set substrates;
- depositing an Electric-Field Enhancement Layer (E-FEL) on the BARC layer, wherein the E-FEL comprises a non-light sensitive masking material;
- depositing a first Active-Species layer on the E-FEL, wherein the first Active-Species layer comprises a first light sensitive masking material;
- depositing a first topcoat layer on the first Active-Species layer;
- exposing the first Active-Species layer using a first reticle and a first radiation source, wherein a first pattern of first charged species regions are created in the first Active-Species layer;
- creating a first enhancement pattern in the E-FEL by establishing a first voltage difference across the first Active-Species layer and the E-FEL, wherein a plurality of first soluble regions are created in a single-patterned E-FEL by transferring the first pattern in the first Active-Species layer to the single-patterned E-FEL;
- removing the first topcoat layer and the first Active-Species layer;
- depositing a second Active-Species layer on the single-patterned E-FEL having the first pattern, wherein the second Active-Species layer comprises a second light sensitive masking material;
- depositing a second topcoat layer on the second Active-Species layer;
- exposing the second Active-Species layer using a second reticle and a second radiation source, wherein a second pattern of second charged species regions are created in the second Active-Species layer;
- creating a second enhancement pattern in the E-FEL by establishing a second voltage difference across the second Active-Species layer and the E-FEL, wherein a plurality of second soluble regions are created in a double-patterned E-FEL by transferring the second pattern in the second Active-Species layer to the double-patterned E-FEL;
- and
- developing the first soluble regions and the second soluble regions, wherein a first set of double-patterned substrates are created.
12 more elements
Dependencies are inferred from the claim text.