Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method

An exposure mask for a mask stage of an exposure system, comprising:

• a substrate;
• and
• a thin film formed on the substrate, the thin film having a mask pattern;
• wherein:
• a flatness of a rectangular flatness measurement area, excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage, is 0.6 μm or less,
• the flatness measurement area is an area including a pattern area serving as a rectangular area for formation of the mask pattern, and
• a shape at a corner portion of the flatness measurement area is such that when a measurement is made of a surface shape of the main surface in a diagonal direction passing through the center of the main surface and connecting two of vertices at four corners of the substrate, a height at a corner of an outer rectangular area, on the main surface, excluding an area of 10 mm inward from the outer peripheral end surface, is not less than −0.02 μm and not more than 0.05 μm using, as a reference, a height at a corner of an inner rectangular area, on the main surface, excluding an area of 15 mm inward from the outer peripheral end surface.

An exposure mask for a mask stage of an exposure system, comprising:

• a substrate;
• and
• a thin film formed on the substrate, the thin film having a mask pattern;
• wherein the substrate comprises:
• a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to set on the mask stage,
• an outer rectangular area, on the main surface, excluding an area of 10 mm inward from the outer peripheral end surface, and
• an inner rectangular area, on the main surface, excluding an area of 15 mm inward from the outer peripheral end surface, and
• wherein:
• at least three of four corner portions of the flatness measurement area each have a rising shape that rises toward an outer peripheral side, and
• a first height at each first corner of the outer rectangular area is not less than −0.02 μm and not more than 0.05 μm using, as a reference, a second height at each second corner of the inner rectangular area, the first corner corresponding to the second corner.

An exposure mask for a mask stage of an exposure system, comprising:

• a substrate;
• and
• a thin film formed on the substrate, the thin film having a mask pattern;
• wherein the substrate comprises;
• a rectangular flatness measurement area having four measurement area corners, the flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage, and
• a rectangular inner area having four inner area corners, the inner area excluding an area of 10 mm inward from the outer peripheral end surface, and
• wherein:
• flatness of the rectangular flatness measurement area is 0.6 μm or less, and
• each of at least three of the four measurement area corners is higher than a respective one of the corresponding inner area corner using, as a reference, a height of the inner area corner.

An exposure mask for a mask stage of an exposure system, comprising:

• a substrate;
• and
• a thin film formed on the substrate, the thin film having a mask pattern;
• wherein the substrate comprises;
• a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage,
• an outer rectangular area having four outer area corners, the outer rectangular area excluding an area of 10 mm inward from the outer peripheral end surface, and
• an inner rectangular area having four inner area corners, the inner rectangular are a excluding an area of 15 mm inward from the outer peripheral end surface, and
• wherein:
• flatness of the rectangular flatness measurement area is 0.6 μm or less, and
• at least one of the four outer area corners is higher than a corresponding one inner area corner using, as a reference, a height of the inner area corner.

A method of manufacturing a semiconductor device, comprising:

• setting an exposure mask on a mask stage of an exposure system;
• and irradiating exposure light onto the exposure mask to transfer a mask pattern to thereby form a pattern on a semiconductor wafer;
• wherein the exposure mask comprises:
• a substrate;
• and
• a thin film formed on the substrate, the thin film having the mask pattern;
• and
• wherein:
• a flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage is 0.6 μm or less,
• at least three of four corner portions of the flatness measurement area each have a rising shape that rises toward an outer peripheral side,
• the flatness measurement area is an area including a pattern area serving as a rectangular area for formation of the mask pattern, and
• the rising shape at the corner portion of the flatness measurement area is a shape having a maximum height of 0.25 μm or less, but greater than 0, using, as a reference point, a corner among corners of the pattern area that is closest to said corner portion of the rising shape.

A method of manufacturing a semiconductor device, comprising:

• setting an exposure mask on a mask stage of an exposure system;
• and
• irradiating exposure light onto the exposure mask to transfer a mask pattern to thereby form a pattern on a semiconductor wafer;
• wherein the exposure mask comprises:
• a substrate;
• and
• a thin film formed on the substrate, the thin film having the mask pattern;
• and
• wherein:
• a flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage is 0.6 μm or less, and
• the flatness measurement area is an area including a pattern area serving as a rectangular area for formation of a mask pattern, and a shape at a corner portion of the flatness measurement area is such that when a measurement is made of a surface shape of the main surface in a diagonal direction passing through the center of the main surface and connecting two of vertices at four corners of the substrate, a height at a corner of an outer rectangular area, on the main surface, excluding an area of 10 mm inward from the outer peripheral end surface is not less than −0.02 μm and not more than 0.05 μm using, as a reference, a height at a corner of an inner rectangular area, on the main surface, excluding an area of 15 mm inward from the outer peripheral end surface.

A method of manufacturing a semiconductor device, comprising:

• setting an exposure mask on a mask stage of an exposure system;
• and
• irradiating exposure light onto the exposure mask to transfer a mask pattern to thereby form a pattern on a semiconductor wafer;
• wherein the exposure mask comprises;
• a substrate;
• and
• a thin film formed on the substrate, the thin film having the mask pattern;
• wherein the substrate comprises:
• a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage,
• an outer rectangular area, on the main surface, excluding an area of 10 mm inward from the outer peripheral end surface, and
• an inner rectangular area, on the main surface, excluding an area of 15 mm inward from the outer peripheral end surface, and
• wherein:
• at least three of four corner portions of the flatness measurement area each have a shape that rises toward an outer peripheral side, and
• a first height at each first corner of the outer rectangular area is not less than −0.02 μm and not more than 0.05 μm using, as a reference, a second height at each second corner of the inner rectangular area, the first corner corresponding to the second corner.

A method of manufacturing a semiconductor device, comprising:

• setting an exposure mask on a mask stage of an exposure system;
• and
• irradiating exposure light onto the exposure mask to transfer a mask pattern to thereby form a pattern on a semiconductor wafer;
• wherein the exposure mask comprises:
• a substrate;
• and
• a thin film formed on the substrate, the thin film having the mask pattern;
• wherein;
• the substrate comprises:
• a rectangular flatness measurement area having four measurement area corners, the flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage, and
• a rectangular inner area having four inner area corners, the inner area excluding an area of 10 mm inward from the outer peripheral end surface, and
• wherein:
• flatness of the rectangular flatness measurement area is 0.6 μm or less, and
• each of at least three of the four measurement area corners is higher than a respective one of the corresponding inner area corner using, as a reference, a height of the inner area corner.

A method of manufacturing a semiconductor device, comprising:

• setting an exposure mask on a mask stage of an exposure system;
• and
• irradiating exposure light onto the exposure mask to transfer a mask pattern to thereby form a pattern on a semiconductor wafer;
• wherein the exposure mask comprises:
• a substrate;
• and
• a thin film formed on the substrate, the thin film having the mask pattern;
• wherein the substrate comprises:
• a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the substrate on a side to be set on the mask stage,
• an outer rectangular area having four outer area corners, the outer rectangular area excluding an area of 10 mm inward from the outer peripheral end surface, and
• an inner rectangular area having four inner area corners, the inner rectangular area excluding an area of 15 mm inward from the outer peripheral end surface, and
• wherein:
• flatness of the rectangular flatness measurement area is 0.6 μm or less, and
• at least one of the four outer area corners is higher than a corresponding one inner area corner using, as a reference, a height of the inner area corner.