Method for optical proximity correction
AssigneeHynix Semiconductor Inc.
InventorCheol Kyun KIM
Life of this patent
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Abstract
Provided is a method for optical proximity correction for use in manufacturing highly resolved semiconductor chips. The method includes setting a target layout; setting a peculiar area; sorting the peculiar area from the target layout; generating a marking layer; resetting a critical dimension (CD) of a peculiar pattern; compensating an optical proximity effect; and manufacturing a mask. The method provides an improved way of improving more accurately CD uniformity by performing optical proximity correction with respect to a pattern to which a bias rule is difficult to apply due to an absence of an adjacent pattern.
Claims11
A method for optical proximity correction, the method comprising:
- setting a target layout;
- setting a peculiar area from within the target layout;
- sorting the peculiar area from within the target layout;
- generating a marking layer;
- resetting a critical dimension (CD) of a peculiar pattern;
- compensating for an optical proximity effect;
- and
- manufacturing a mask.
Dependencies are inferred from the claim text.