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US 2010/0247806 A1Published application
Method of producing gas barrier layer
AssigneeFUJIFILM Corporation
InventorToshiya TAKAHASHI
Life of this patent
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Abstract
The producing method of a gas barrier layer uses a material having at least one Si—H bond, a material having at least one N-H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas and forms the gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c: 2<B/A<20 Formula a C/B<2 Formula b 0.5<D/B<50. Formula c
Claims12
A method of producing a gas barrier layer comprising:
- using a material having at least one Si—H bond, a material having at least one N—H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas;
- and
- forming said gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c:
- 2<B/A<20 Formula a
- C/B<2 Formula b
- 0.5<D/B<50. Formula c
3 more elements
Dependencies are inferred from the claim text.