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US 2010/0246241 A1Published application
Semiconductor device with source lines extending in a different direction
AssigneeElpida Memory, Inc.
InventorsAkiyoshi SEKO, Shuichi Tsukada
Life of this patent
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Abstract
A semiconductor device includes a plurality of word lines extending in a first direction, a plurality of bit lines extending in a second direction, a plurality of source lines formed along a third direction which is different from the first and the second directions, and a source line control circuit serving as a driving arrangement selectively driving the plurality of source lines.
Claims20
A device comprising:
- a plurality of word lines each extending in a first direction;
- a plurality of bit lines each extending in a second direction;
- a plurality of source lines each being formed along a third direction which is different from the first and the second directions;
- a plurality of memory cells which are connected to points of intersection of the word lines, the bit lines, and the source lines;
- and
- a driving arrangement selectively driving the plurality of source lines which correspond to memory cells selected from the plurality of memory cells.
3 more elements
A device comprising:
- a plurality of memory cells arranged in a matrix fashion;
- a plurality of word lines connected in common to said plurality of memory cells which are arranged in a row direction;
- a plurality of bit lines connected in common to said plurality of memory cells which are arranged in a column direction;
- a plurality of source lines connected in common to said plurality of memory cells which are arranged in a diagonal direction different from the row and the column directions;
- and
- a driving arrangement selectively driving said plurality of source lines which correspond to memory cells selected from said plurality of memory cells.
3 more elements
A method comprising:
- controlling a device,
- wherein said device comprises a plurality of word lines extending in a first direction, a plurality of bit lines extending in a second direction, a plurality of source lines extending in a direction different from said first and second directions, and a plurality of memory cells connected to points of intersection of said word lines, said bit lines, and said source lines, respectively, each of said memory cell including a memory element storing information and a selection transistor selecting said memory element,
- said controlling comprising:
- controlling said plurality of source lines to a first predetermined potential;
- controlling said source line corresponding to said memory cell of an access subject from the first predetermined potential to a second predetermined potential and controlling said selection transistor to activation;
- and
- controlling the corresponding source line from the second predetermined potential to the first predetermined potential after sensing of said memory cell and controlling said selection transistor to inactivation.
4 more elements
Dependencies are inferred from the claim text.