Electrostatic discharge protection device of output driver stage

Abstract

Provided is an electrostatic discharge (ESD) protection device of an output driver stage of a semiconductor chip. The ESD protection device of an output driver stage, which includes a p-channel metal-oxide-semiconductor (PMOS) transistor having a source connected to a first source voltage and an n-channel metal-oxide-semiconductor (NMOS) transistor having a source connected to a second source voltage, the MOS transistors having gates applied with output signals from an internal circuit and drains connected to the output pad, wherein a distance between contacts formed on a drain region and a gate poly of the MOS transistors is relatively greater than a value according to a predetermined design rule.

Dependencies are inferred from the claim text.