Dopant profile measurement module, method and apparatus
AssigneeAgilent Technolgies, Inc.
InventorsHassan Tanbakuchi, Roger B. Stancliff, Timothy M. Graham, Wenhai Han
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Abstract
An apparatus comprises: a first signal source; a dopant profile measurement module (DPPM) configured to receive a portion of the signal from the signal source; a probe tip connected to the reflective coupler; a load connected in parallel with the probe tip; and a second signal source connected to a load, wherein the signal source is configured to provide an amplitude-modulated (AM) signal to the probe tip. A method is also described.
Claims20
An apparatus, comprising:
- a first signal source;
- a dopant profile measurement module (DPPM) configured to receive a portion of the signal from the signal source;
- a probe tip connected to the reflective coupler;
- a load connected in parallel with the probe tip;
- and
- a second signal source connected to a load, wherein the signal source is configured to provide an amplitude-modulated (AM) signal to the probe tip.
In an apparatus for measuring a doping level of a sample, the apparatus, comprising:
- a first signal source;
- a dopant profile measurement module (DPPM) configured to receive a portion of a signal from the first signal source;
- a reflective coupler configured to receive a second portion of the signal from the reference coupler;
- a probe tip connected to the reflective coupler;
- a load connected in parallel with the probe tip;
- and a second signal source connected to a load, a method, comprising:
- transmitting the signal from the first signal source to the reference coupler;
- providing the first portion of the signal to the DPPM;
- providing the second portion of the signal to a reflective coupler and to the probe tip;
- providing an amplitude modulated (AM) signal to the probe tip;
- modulating the second portion of the signal with the AM signal;
- and
- reflecting the modulated portion of the signal back to the reflective coupler.
A method of measuring a capacitance of a semiconductor, the method comprising:
- applying a comparatively low frequency modulating voltage to a location of the semiconductor;
- and
- simultaneously measuring the capacitance as a function of the low frequency modulating voltage at a comparatively high frequency.
Dependencies are inferred from the claim text.