Organic Luminescence Transistor Device and Manufacturing Method Thereof

An organic luminescence transistor device comprising a substrate,

• a first electrode layer provided in a predetermined pattern on a side of an upper surface of the substrate,
• a layered structure provided on the side of an upper surface of the substrate at an area not provided with the first electrode layer, the layered structure sandwiching the first electrode layer in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order,
• an organic EL layer provided at least on a side of an upper surface of the first electrode layer, and
• a second electrode layer provided on a side of an upper surface of the organic EL layer,
• wherein
• a thickness of the first electrode layer and a thickness of the insulation layer are adjusted in such a manner that the first electrode layer is not in contact with the assistance electrode layer, and
• the electric-charge-injection inhibiting layer is provided into a shape larger than that of the assistance electrode in a plan view.

An organic transistor device comprising a substrate,

• a first electrode layer provided on a side of an upper surface of the substrate,
• a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order,
• an organic semiconductor layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure, and
• a second electrode layer provided on a side of an upper surface of the organic semiconductor layer,
• wherein
• the electric-charge-injection inhibiting layer is provided into a shape larger than that of the assistance electrode in a plan view.

An organic transistor device comprising

• a substrate,
• a first electrode layer provided in a predetermined pattern on a side of an upper surface of the substrate,
• a layered structure provided on the side of an upper surface of the substrate at an area not provided with the first electrode layer, the layered structure sandwiching the first electrode layer in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order,
• an organic semiconductor layer provided at least on a side of an upper surface of the first electrode layer, and
• a second electrode layer provided on a side of an upper surface of the organic semiconductor layer,
• wherein
• a thickness of the first electrode layer and a thickness of the insulation layer are adjusted in such a manner that the first electrode layer is not in contact with the assistance electrode layer, and
• the electric-charge-injection inhibiting layer is provided into a shape larger than that of the assistance electrode in a plan view.