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US 2010/0244190 A1Published application
Semiconductor device and manufacturing method
OwnerToshihiko Nakanoinventor
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Abstract
A semiconductor device, include a capacitor of a MIM (Metal-Insulator-Metal) structure; and at least one pair of shield parts which sandwich said MIM structure capacitor sandwiched by an insulating film.
Claims10
A semiconductor device, comprising:
- a capacitor of a MIM (Metal-Insulator-Metal) structure;
- and
- at least one pair of shield parts which sandwich said MIM structure capacitor sandwiched by an insulating film.
A manufacturing method of a semiconductor device, comprising:
- a step for forming an under shield part;
- a step for forming a first insulating film and a MIM structure capacitor in this order on said under shield part;
- and
- a step for forming a second insulating film and an upper shield part in this order on said MIM structure capacitor.
1 more element
Dependencies are inferred from the claim text.