Method of Forming an Electrical Contact Between a Support Wafer and the Surface of a Top Silicon Layer of a Silicon-on-Insulator Wafer and an Electrical Device Including Such an Electrical Contact

Abstract

Method of forming an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer. The method comprises etching a cavity into the top silicon layer and the insulator layer. A selective epitaxial step is performed for growing an epitaxial layer of silicon inside the cavity up to the surface of the top silicon layer. An electrical device comprising an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer formed according to the inventive method.

Dependencies are inferred from the claim text.