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US 2010/0244138 A1Published application
Semiconductor varactor with reduced parasitic resistance
AssigneeTexas Instruments Incorporated
InventorsKamel Benaissa, Chi-Cheong Shen
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Abstract
A semiconductor varactor with reduced parasitic resistance is disclosed. A contact isolation structure (32) is formed in a well region (20). The gate contact structures (70) are formed above the contact isolation structure (32) reducing the parasitic resistance. In addition, contact structures are formed on the gate layer (50) over the well regions (20) in a further embodiment to reduce the parasitic resistance.
Claims8
An integrated circuit including a varactor, comprising:
- a semiconductor substrate with at least a first isolation region and a second isolation region separated by a first distance;
- a well region of a first conductivity type formed in said semiconductor substrate between said first isolation region and said second isolation region;
- at least a first and a second active region defined in said well region by a contact isolation structure formed in said well region between said first isolation region and said second isolation region;
- contact regions of the first conductivity type formed in the first and second active regions;
- a gate dielectric layer formed on said first active region and said second active region;
- a gate electrode layer formed on said gate dielectric layer, wherein said gate electrode layer overlies said first active region, said second active region, and said contact isolation structure;
- and
- electrical contacts to said gate electrode layer, wherein said electrical contacts are formed over said contact isolation region.
5 more elements
An integrated circuit including a varactor, comprising
- a well region of a first conductivity type formed in a semiconductor;
- a gate dielectric layer formed on said well region;
- a gate electrode layer formed on said gate dielectric layer;
- contact regions of the first conductivity type formed in said well region, wherein said contact regions are source/drain implantations;
- and
- electrical contacts to said gate electrode layer, wherein said electrical contacts overlie a contact isolation structure formed in said well region.
3 more elements
Dependencies are inferred from the claim text.