Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device, comprising:

• forming a first partially depleted transistor in a semiconductor layer on an insulating layer;
• and
• forming a first diode in which a first impurity layer and a second impurity layer are stacked in a depth direction of the semiconductor layer, wherein
• forming the first transistor includes
• forming a first gate electrode above the semiconductor layer via an insulating film and
• forming a first source or a first drain of a first conductivity type in the semiconductor layer below both sides of the gate electrode, and
• forming the first diode includes
• introducing an impurity of a second conductivity type to a shallow portion of the semiconductor layer to form the first impurity layer of the second conductivity type such that a side surface of the first impurity layer is in contact with the semiconductor layer in a region just below the first gate electrode and
• introducing an impurity of the first conductivity type to a deep portion of the semiconductor layer to form the second impurity layer of the first conductivity type such that a side surface of the second impurity layer is in contact with the semiconductor layer in the region just below the first gate electrode.