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US 2010/0244107 A1Published application
Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors
AssigneeGlobalfoundries Inc.
InventorsStephan Kronholz, Vassilios PAPAGEORGIOU, Maciej WIATR
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Abstract
In sophisticated P-channel transistors, a high germanium concentration may be used in a silicon/germanium alloy, wherein an additional semiconductor cap layer may provide enhanced process conditions during the formation of a metal silicide. For example, a silicon layer may be formed on the silicon/germanium alloy, possibly including a further strain-inducing atomic species other than germanium, in order to provide a high strain component while also providing superior conditions during the silicidation process.
Claims23
A method, comprising:
- forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure of a transistor;
- forming a strain-inducing silicon/germanium alloy in said cavity, said silicon/germanium alloy having a first silicon concentration;
- forming a silicon-containing semiconductor material on said strain-inducing silicon/germanium alloy, said silicon-containing semiconductor material having a second silicon concentration that is greater than said first silicon concentration;
- forming drain and source regions at least partially in said silicon/germanium alloy and said silicon-containing semiconductor material;
- and
- forming a metal silicide in said silicon-containing semiconductor material.
3 more elements
A method, comprising:
- forming a silicon-containing semiconductor material on a silicon/germanium alloy formed in an active region of a P-type transistor, said silicon-containing semiconductor material having a germanium concentration that is less than a germanium concentration of said silicon/germanium alloy;
- and
- forming a metal silicide locally restricted to said silicon-containing semiconductor material.
A semiconductor device, comprising:
- a gate electrode structure formed above a silicon-containing semiconductor region;
- drain and source regions formed in said silicon-containing semiconductor region;
- a silicon/germanium alloy formed at least partially in at least one of said drain region and said source region, said silicon/germanium alloy having a first germanium concentration;
- and
- a metal silicide at least partially formed in said drain and source regions, said metal silicide having a second germanium concentration that is less than said first germanium concentration.
2 more elements
Dependencies are inferred from the claim text.