Structure and method of fabricating finfet
AssigneeInternational Business Machines Corporation
InventorsKevin K. Chan, Zhibin Ren, Xinhui Wang
Life of this patent
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Abstract
A CMOS FinFET device and a method of manufacturing the same using a three dimensional doping process is provided. The method of forming the CMOS FinFET includes forming fins on a first side and a second side of a structure and forming spacers of a dopant material having a first dopant type on the fins on the first side of the structure. The method further includes annealing the dopant material such that the first dopant type diffuses into the fins on the first side of the structure. The method further includes protecting the first dopant type from diffusing into the fins on the second side of the structure during the annealing.
Claims25
A method of forming a structure, comprising:
- forming fins on a first side and a second side of a structure;
- forming spacers of a dopant material having a first dopant type on the fins on the first side of the structure;
- annealing the dopant material such that the first dopant type diffuses into the fins on the first side of the structure;
- and
- protecting the first dopant type from diffusing into the fins on the second side of the structure during the annealing.
A method of forming FinFET structures, comprising:
- etching fins on a first side of a structure and a second side of the structure;
- protecting the fins on the first side of the structure from a thermal diffusion process performed on the fins on the second side of the structure;
- forming spacers with a first dopant type on the fins on the second side of the structure;
- and
- performing the thermal diffusion process on the fins on the second side of the structure by annealing the spacers such that the first dopant type diffuses into the fins on the second side of the structure.
A method of forming a structure comprising thermally diffusing a first dopant type from a spacer material into fins on a first side of a structure while protecting fins on a second side of the structure from the first dopant type diffusing into the fins on the second side of the structure.
A structure, comprising:
- a first set of fins on an nFET side of the structure, the first set of fins having diffused dopant of a first dopant type and extending laterally under respective gates to an extent of a thickness of a spacer material used for thermally diffusing the first dopant type into the first set of fins;
- and
- a second set of fins on a pFET side of the structure, the second set of fins having diffused dopant of a second dopant type and extending laterally under respective gates to an extent of a thickness of a spacer material used for thermally diffusing the second dopant type into the second set of fins.
Dependencies are inferred from the claim text.