Dual triggered silicon controlled rectifier

A dual triggered silicon controlled rectifier (DTSCR) comprising:

• a semiconductor substrate;
• a well region, positioned in the semiconductor substrate;
• a first N+ diffusion region and a first P+ diffusion region, positioned in the semiconductor substrate, for use as a first electrode of the DTSCR;
• a second N+ diffusion region and a second P+ diffusion region, positioned in the well region, for use as a second electrode of the DTSCR;
• a third P+ diffusion region, positioned in one side of the DTSCR and in direct contact with both the well region and the semiconductor substrate;
• a third N+ diffusion region, positioned in another side of the DTSCR and in direct contact with both the well region and the semiconductor substrate;
• a first gate, positioned above the semiconductor substrate between the first P+ diffusion region and the third P+ diffusion region, for use as a P-type trigger node to receive a first trigger current or a first trigger voltage;
• and
• a second gate, positioned above the well region between the second N+ diffusion region and the third N+ diffusion region, for use as an N-type trigger node to receive a second trigger current or a second trigger voltage;
• wherein the third P+ diffusion region and the third N+ diffusion region are positioned across from each other and spaced apart in a direction of a gate width of the first gate.