Insulated gate bipolar transistor
AssigneesSanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.
InventorsShuji Yoneda, Kenji Sawamura
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Abstract
In some embodiments, an insulated gate bipolar transistor includes a drift layer, insulation gates formed at a principle surface portion of the drift layer, base regions formed in a between-gate region, an emitter region formed in the base region so as to be adjacent to the insulation gate, an emitter electrode connected to the emitter region, a collector layer formed at the other side of the principle surface portion of the drift layer, and a collector electrode connected to the collector layer. The conductive type base regions are separated with each other by the drift layers, and the drift layer and the emitter electrode are insulated by an interlayer insulation film.
Claims11
An insulated gate bipolar transistor comprising:
- a first conductive type drift layer;
- a plurality of insulation gates formed at a principle surface portion of the drift layer so as to extend in a first direction and arranged in parallel with each other in a second direction perpendicular to the first direction;
- a plurality of second conductive type base regions each formed in a between-gate region sandwiched by and between a pair of adjacent insulation gates;
- a first conductive type emitter region formed in the base region so as to be adjacent to the insulation gates;
- an emitter electrode connected to the emitter region;
- a second conductive type collector layer formed at the other side of the principle surface portion of the drift layer;
- and
- a collector electrode connected to the collector layer,
- wherein the plurality of second conductive type base regions are separated with each other in the first direction by the drift layer, and
- wherein the drift layer and the emitter electrode are insulated.
Dependencies are inferred from the claim text.