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AssigneeMitsubishi Chemical Corporation
InventorsHideyoshi Horie, Kaori Kurihara
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During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
1-81. (canceled)
A method for growing a crystal of a nitride semiconductor on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, the method comprising:
A method for growing a crystal of a nitride semiconductor on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, the method comprising:
A method for growing a crystal of a nitride semiconductor on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, the method comprising:
A nitride semiconductor epitaxially grown on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, comprising a nitride semiconductor layer epitaxially grown without intentional supply of a Si source material provided on the principal nitride plane of the base without interposing any other layer.
A nitride semiconductor epitaxially grown on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, comprising an outermost surface of the nitride semiconductor orthogonal to a direction of the epitaxial growth with an area of 30 mm2 to 500 cm2 both inclusive.
A nitride semiconductor epitaxially grown on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, comprising an epitaxial layer with a dislocation density of 3×107 cm−2 or below.
A nitride semiconductor epitaxially grown on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, comprising a stack of a first nitride semiconductor layer and a second nitride semiconductor layer, wherein an outermost surface of the stack has an average surface roughness Ra of 20.0 nm or below.
A nitride semiconductor epitaxially grown on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, comprising a stack of a first nitride semiconductor layer and a second nitride semiconductor layer, wherein an outermost surface of the stack has a crystal plane within ±5 degrees inclusive from a (1-100) m-plane.
A nitride semiconductor epitaxially grown on a principal nitride plane of a base at least one principal plane of which is a nonpolar nitride, comprising a stack of a first nitride semiconductor layer and a second nitride semiconductor layer, wherein a peak value of silicon (Si) concentration in the first nitride semiconductor layer is 1×1021 cm−3 or below, and the second nitride semiconductor layer is of an n conductivity type.
Dependencies are inferred from the claim text.