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US 2010/0244065 A1Published application
Semiconductor light emitting device grown on an etchable substrate
AssigneesKoninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLC
InventorMark M. Butterworth
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Abstract
A III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on a silicon substrate. The III-nitride structure is attached to a host, then a portion of the silicon substrate is etched away to reveal a top surface of the III-nitride structure. In some embodiments, the silicon substrate is etched to form an enclosure on the top surface of the III-nitride structure. A wavelength converting material such as phosphor may be disposed in the enclosure.
Claims14
A device comprising:
- a III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region;
- a reflective electrical contact disposed on a bottom surface of the III-nitride structure;
- and
- a silicon structure in direct contact with a portion of a top surface of the III-nitride structure.
1 more element
A method comprising:
- growing on a silicon substrate a III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region;
- forming a reflective contact on a bottom surface of the III-nitride structure;
- attaching the bottom surface of the III-nitride structure to a host;
- etching away a portion of the silicon substrate to reveal a top surface of the III-nitride structure.
1 more element
Dependencies are inferred from the claim text.