Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same

A method of manufacturing a silicon carbide semiconductor device with a Schottky barrier diode, the method comprising:

• preparing a first conductivity type silicon carbide substrate having a first surface and a second surface opposite to the first surface;
• forming a first conductivity type silicon carbide drift layer on the first surface of the substrate in such a manner that an impunity concentration of the drift layer is less than an impurity concentration of the substrate;
• forming a Schottky electrode on the drift layer in such a manner that the Schottky electrode forms a Schottky contact with a surface of the drift layer in a cell region of the drift layer;
• and
• forming an ohmic electrode on the second surface of the substrate, wherein
• forming the Schottky electrode includes forming an oxide layer of an oxide of a first metal in such a manner that the oxide layer is in direct contact with the surface of the drift layer and,
• the first metal is molybdenum, titanium, nickel, or an alloy of at least two of these elements.