Group III nitride compound semiconductor light emitting element and manufacturing method thereof

A group III nitride compound semiconductor light emitting element, which having a luminescent layer formed from a group III nitride compound semiconductor containing at least indium, comprising:

• a substrate;
• a buffer layer formed on the substrate;
• a first layer which is a single crystal layer of a group III nitride compound semiconductor, the first layer formed on the buffer layer and including a threading dislocation;
• a second layer of a group III nitride compound semiconductor formed on the first layer, the second layer including a pit and a flat portion, wherein the pit continuing from the threading dislocations, formed during the second layer growth, and having a cross section parallel to the substrate expanding in a growth direction of the second layer;
• a luminescent layer formed on the second layer while along the pit of the second layer and the flat portion of the second layer so as to form a flat portion and a pit, and an indium concentration in the pit of the luminescent layer smaller than an indium concentration in the flat portion of the luminescent layer;
• a third layer of a group III nitride compound semiconductor formed on the luminescent layer;
• and
• a luminescent spectrum whose width is expanded as compared to a case where the pit does not exist.